Uni ed Complete MOSFET Model for Analysis of Digital and Analog Circuits

In this paper, we describe the complete MOSFET model developed for circuit simulation. The model describes all transistor characteristics as functions of surface potentials, which are calculated iteratively at each applied voltage under the charge-sheet approximation. The key idea of this development is to put as much physics as possible into the equations describing the surface potentials. Since the model includes both the drift and the di usion contributions, a single equation is valid from the subthreshold to the saturation regions. The uni ed treatment of our model allows all transistor characteristics to be calculated without any nonphysical tting parameters. Additionally the calculation time is drastically reduced in comparison with a conventional piece-wise model.